The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 05, 2025
Filed:
Dec. 20, 2022
Applied Materials, Inc., Santa Clara, CA (US);
Supakit Charnvanichborikarn, Gloucester, MA (US);
Cao-Minh Vincent Lu, Grenoble, FR;
Ana Cristina Gomez Herrero, Grenoble, FR;
Hans-Joachim Ludwig Gossmann, Summit, NJ (US);
Wei Zou, Lexington, MA (US);
Andrew Michael Waite, Beverly, MA (US);
Applied Materials, Inc., Santa Clara, CA (US);
Abstract
A method of processing a semiconductor substrate, including performing a first ion implantation process on the substrate, wherein a first ion beam formed of an ionized first dopant species is directed at a top surface of the substrate and is blocked from a first portion of the substrate while being allowed to implant a second portion of the substrate, and performing a second ion implantation process on the substrate, wherein a second ion beam formed of an ionized second dopant species is directed at the top surface of the substrate and is blocked from the first portion of the substrate while being allowed to implant the second portion of the substrate, wherein an effect of the second ion implantation process on an oxidation rate of the second portion counteracts an effect of the first ion implantation process on the oxidation rate of the second portion.