The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 02, 2024
Filed:
Sep. 21, 2021
Applicant:
Applied Materials, Inc., Santa Clara, CA (US);
Inventors:
Qintao Zhang, Mt Kisco, NY (US);
Wei Zou, Lexington, MA (US);
Assignee:
Applied Materials, Inc., Santa Clara, CA (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/265 (2006.01); H01L 29/06 (2006.01); H01L 29/66 (2006.01); H01L 29/16 (2006.01);
U.S. Cl.
CPC ...
H01L 21/265 (2013.01); H01L 29/0684 (2013.01); H01L 29/66068 (2013.01); H01L 29/1608 (2013.01);
Abstract
Provided here are methods and manufacturing systems to implant protons into SiC IGBT devices at multiple depths in the drift layer of the SiC IGBT device. Provides are SiC IGBT devices manufactured with process steps including multiple proton implant processes where the SiC IGBT device is irradiated with ion to affect proton implantation into the SiC IGBT device at multiple depths in the drift region to reduced minority carrier lifetime.