The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 10, 2024
Filed:
Jun. 29, 2021
Applicant:
Applied Materials, Inc., Santa Clara, CA (US);
Inventors:
Qintao Zhang, Mt Kisco, NY (US);
Samphy Hong, Saratoga Springs, NY (US);
Wei Zou, Lexington, MA (US);
Judy Campbell Soukup, Saratoga Springs, NY (US);
Assignee:
Applied Materials, Inc., Santa Clara, CA (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/00 (2006.01); H01L 21/265 (2006.01); H01L 21/266 (2006.01);
U.S. Cl.
CPC ...
H01L 21/26593 (2013.01); H01L 21/26533 (2013.01); H01L 21/266 (2013.01);
Abstract
Disclosed herein are methods for forming a buried layer using a low-temperature ion implant. In some embodiments a method may include providing an opening through a mask, wherein the mask is formed directly atop a substrate, and forming a buried layer in the substrate by performing a low-temperature ion implant through the opening of the mask. The method may further include forming an oxide layer over the substrate including over the buried layer.