The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 11, 2025
Filed:
Dec. 23, 2021
Applied Materials, Inc., Santa Clara, CA (US);
Alexander K. Eidukonis, Amesbury, MA (US);
Hans-Joachim L. Gossmann, Summit, NJ (US);
Dennis Rodier, Francestown, NH (US);
Stanislav S. Todorov, Topsfield, MA (US);
Richard White, Newmarket, NH (US);
Wei Zhao, Lexington, MA (US);
Wei Zou, Lexington, MA (US);
Supakit Charnvanichborikarn, Gloucester, MA (US);
Applied Materials, Inc., Santa Clara, CA (US);
Abstract
A method of operating a beamline ion implanter may include performing, in an ion implanter, a first implant procedure to implant a dopant of a first polarity into a given semiconductor substrate, and generating an estimated implant dose of the dopant of the first polarity based upon a set of filtered information, generated by the first implant procedure. The method may also include calculating an actual implant dose of the dopant of the first polarity using a predictive model based upon the estimated implant dose, and performing, in the ion implanter, an adjusted second implant procedure to implant a dopant of a second polarity into a select semiconductor substrate, based upon the actual implant dose.