The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 08, 2023
Filed:
Dec. 22, 2020
Applicant:
Applied Materials, Inc., Santa Clara, CA (US);
Inventors:
Assignee:
Applied Materials, Inc., Santa Clara, CA (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/66 (2006.01); H01L 21/67 (2006.01); H01L 29/778 (2006.01);
U.S. Cl.
CPC ...
H01L 29/66462 (2013.01); H01L 21/67069 (2013.01); H01L 21/67075 (2013.01); H01L 29/66431 (2013.01); H01L 29/66636 (2013.01); H01L 29/778 (2013.01);
Abstract
A method of fabricating a high electron mobility transistor is disclosed. The method comprises using an ion implantation process to amorphize a portion of the barrier layer to a specific depth. The etch rate of this amorphized portion is much faster than that of the rest of the barrier layer. In this way, the depth of the recessed regions into which the source and drain contacts are disposed is more tightly controlled. Further, the etching process may be a wet or dry etch process. The roughness of the recessed region may also be improved using this approach.