The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Mar. 17, 2026

Filed:

Jan. 30, 2023
Applicant:

Applied Materials, Inc., Santa Clara, CA (US);

Inventors:

Eric Jay Simmons, Ballston Spa, NY (US);

Qintao Zhang, Mt Kisco, NY (US);

Wei Zou, Lexington, MA (US);

Andrew Michael Waite, Beverly, MA (US);

Jared Forrest Traynor, San Jose, CA (US);

Miguel Sam Fung, Cupertino, CA (US);

Vincent V. Granuzzo, Albany, NY (US);

David J. Lee, Poughkeepsie, NY (US);

Assignee:

Applied Materials, Inc., Santa Clara, CA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G02B 6/13 (2006.01); G02B 6/12 (2006.01); G02B 6/136 (2006.01);
U.S. Cl.
CPC ...
G02B 6/13 (2013.01); G02B 2006/12188 (2013.01); G02B 6/136 (2013.01);
Abstract

Disclosed herein are approaches for forming a uniform film with reduced surface roughness for photonic applications. One method includes providing a workpiece including a contact etch stop layer (CESL) over a device layer, patterning the CESL to expose an upper surface of the device layer in a waveguide target area, and patterning a waveguide from a dielectric film formed over the waveguide target area. The method may further include directing ions into an upper surface of the waveguide using a high-temperature ion implant to decrease a surface roughness of the upper surface of the waveguide.


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