The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 20, 2025
Filed:
Dec. 03, 2021
Applicant:
Applied Materials, Inc., Santa Clara, CA (US);
Inventors:
Qintao Zhang, Mt Kisco, NY (US);
Samphy Hong, Saratoga Springs, NY (US);
Wei Zou, Lexington, MA (US);
Assignee:
Applied Materials, Inc., Santa Clara, CA (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/266 (2006.01); H01L 21/04 (2006.01); H10D 62/832 (2025.01);
U.S. Cl.
CPC ...
H01L 21/266 (2013.01); H01L 21/0465 (2013.01); H10D 62/8325 (2025.01);
Abstract
Disclosed herein are methods for increasing MOSFET threshold voltage to enable higher SiC mobility. In some embodiments, a method includes providing a device structure including a dielectric layer over an epitaxial layer, patterning a hardmask layer over the dielectric layer, performing a first ion implant to form a well in the epitaxial layer, and performing a second ion implant to form an interface layer between the well and the dielectric layer.