The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 30, 2023

Filed:

Oct. 07, 2020
Applicant:

Applied Materials, Inc., Santa Clara, CA (US);

Inventors:

Sipeng Gu, Gloucester, MA (US);

Wei Zou, Gloucester, MA (US);

Kyu-Ha Shim, Gloucester, MA (US);

Assignee:

Applied Materials, Inc., Santa Clara, CA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/06 (2006.01); H01L 21/762 (2006.01);
U.S. Cl.
CPC ...
H01L 29/0653 (2013.01); H01L 21/76243 (2013.01);
Abstract

A method of isolating sections of the channel layer in a SOI workpiece is disclosed. Rather than etching material to create trenches, which are then filled with a dielectric material, ions are implanted into portions of the channel layer to transform these implanted regions from silicon or silicon germanium into an electrically insulating material. These ions may comprise at least one isolating species, such as oxygen, nitrogen, carbon or boron. This eliminates various processes from the fabrication sequence, including an etching process and a deposition process. Advantageously, this approach also results in greater axial strain in the channel layer, since the channel layer is continuous across the workpiece.


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