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For the Inventor, By the Inventor

Andover, MA, United States of America

Kyu-Ha Shim

USPTO Granted Patents = 18 

Average Co-Inventor Count = 4.0

ph-index = 2

Forward Citations = 32(Granted Patents)


Location History:

  • Andover, MA (US) (2011 - 2021)
  • Gloucester, MA (US) (2023)

Company Filing History:

goldMedal9 out of 916 
 
Varian Semiconductor Equipment Associates, Inc.
 patents
silverMedal9 out of 13,684 
 
Applied Materials, Inc.
 patents

Years Active: 2011-2025

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18 patents (USPTO):
1. 12457731 - Bottom contact formation for 4Fvertical DRAM (2025-10-28),
2. 12444615 - Forming a doped hardmask (2025-10-14),
3. 12142475 - Sequential plasma and thermal treatment (2024-11-12),
4. 12094709 - Plasma treatment process to densify oxide layers (2024-09-17),
5. 11728383 - Localized stressor formation by ion implantation (2023-08-15),
6. 11664419 - Isolation method to enable continuous channel layer (2023-05-30),
7. 11594441 - Handling for high resistivity substrates (2023-02-28),
8. 11114299 - Techniques for reducing tip to tip shorting and critical dimension variation during nanoscale patterning (2021-09-07),
9. 10930508 - Replacement metal gate formation of PMOS ultra-low voltage devices using a thermal implant (2021-02-23),
10. 10811257 - Techniques for forming low stress etch-resistant mask using implantation (2020-10-20),
11. 10354875 - Techniques for improved removal of sacrificial mask (2019-07-16),
12. 10332748 - Etch rate modulation through ion implantation (2019-06-25),
13. 10204909 - Non-uniform gate oxide thickness for DRAM device (2019-02-12),
14. 9934982 - Etch rate modulation through ion implantation (2018-04-03),
15. 8716155 - Method to enhance charge trapping (2014-05-06),

Title: Kyu-Ha Shim: Innovator in Semiconductor Technology

Introduction

Kyu-Ha Shim is a prominent inventor based in Andover, MA, known for his significant contributions to semiconductor technology. With a total of 18 patents to his name, he has made remarkable advancements in the field, particularly in dynamic random-access memory (DRAM) devices.

Latest Patents

Among his latest patents is a method for bottom contact formation for 4Fvertical DRAM. This innovative approach involves providing a plurality of fins extending from a substrate, forming a spacer layer over these fins, and etching the substrate to expose the base portion of the fins. Additionally, he has developed methods for forming a doped hardmask, which includes depositing a hardmask with ions implanted at different tilt angles. This technique allows for an evenly distributed dopant profile that enhances the hardness of the carbon hardmask.

Career Highlights

Kyu-Ha Shim has worked with notable companies in the semiconductor industry, including Varian Semiconductor Equipment Associates, Inc. and Applied Materials, Inc. His experience in these organizations has contributed to his expertise and innovative capabilities in semiconductor technology.

Collaborations

Throughout his career, Kyu-Ha has collaborated with esteemed colleagues such as Rajesh Prasad and Sipeng Gu. These collaborations have further enriched his work and led to significant advancements in the field.

Conclusion

Kyu-Ha Shim's contributions to semiconductor technology, particularly in the development of DRAM devices, highlight his role as a leading inventor in the industry. His innovative patents and collaborations reflect his commitment to advancing technology and improving device performance.

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