The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 17, 2024
Filed:
Jul. 30, 2021
Applied Materials, Inc., Santa Clara, CA (US);
Jung Chan Lee, San Jose, CA (US);
Mun Kyu Park, San Jose, CA (US);
Jun Lee, Andover, MA (US);
Euhngi Lee, Santa Clara, CA (US);
Kyu-Ha Shim, Gloucester, MA (US);
Deven Matthew Raj Mittal, Santa Clara, CA (US);
Sungho Jo, Chestnut Hill, MA (US);
Timothy Miller, Santa Clara, CA (US);
Jingmei Liang, San Jose, CA (US);
Praket Prakash Jha, San Jose, CA (US);
Sanjay G. Kamath, Fremont, CA (US);
APPLIED MATERIALS, INC., Santa Clara, CA (US);
Abstract
Embodiments of the present disclosure generally relate to methods for gap fill deposition and film densification on microelectronic devices. The method includes forming an oxide layer containing silicon oxide and having an initial wet etch rate (WER) over features disposed on the substrate, and exposing the oxide layer to a first plasma treatment to produce a treated oxide layer. The first plasma treatment includes generating a first plasma by a first RF source and directing the first plasma to the oxide layer by a DC bias. The method also includes exposing the treated oxide layer to a second plasma treatment to produce a densified oxide layer. The second plasma treatment includes generating a second plasma by top and side RF sources and directing the second plasma to the treated oxide layer without a bias. The densified oxide layer has a final WER of less than one-half of the initial WER.