San Jose, CA, United States of America

Praket Prakash Jha

This inventor holds 36 USPTO granted patents and 14 published patent applications, primarily in CVD Film Technology. Top assignee: Applied Materials, Inc.. Active years: 2016-2026.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Praket Prakash Jha. Retrieved from https://idiyas.com/inventor/praket-prakash-jha

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

USPTO Granted Patents = 36 

% Patents Active = 86.1

Average Co-Inventor Count = 5.9

ph-index = 4

Forward Citations = 73(Granted Patents)


Company Filing History:


Years Active: 2016-2026

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Areas of Expertise:
CVD Films
Plasma Treatment
Defect Reduction
3D NAND
Silicon Nitride
Dielectric Films
Gap Fill
Surface Roughness
Chemical Vapor Deposition
Overlay Control
High Energy Plasma
Amorphous Silicon
36 patents (USPTO):Explore Patents

Title: Innovations by Praket Prakash Jha: A Leader in Microelectronics Patents

Introduction: Praket Prakash Jha is a distinguished inventor based in San Jose, California, known for his substantial contributions to the field of microelectronics. With a remarkable portfolio of 30 patents, he has pioneered innovative methods that advance semiconductor technology and enhance device performance.

Latest Patents: Among Praket Jha's latest patents are two notable innovations. The first is a method for post-treating silicon nitride-based dielectric films using high-energy low-dose plasma. This method involves positioning a substrate with a silicon nitride film in a processing chamber and exposing it to helium-containing plasma. The energy of the helium ions ranges from 1 eV to 3.01 eV, and the flux density varies between 5×10 ions/cm·sec and 1.37×10 ions/cm·sec, optimizing the dielectric film's properties.

The second patent presents a plasma treatment process for densifying oxide layers on microelectronic devices. This method describes the formation of a silicon oxide-containing oxide layer followed by a two-step plasma treatment process. The first plasma treatment employs a first RF source to generate plasma directed by a DC bias, and the treated oxide layer is subsequently exposed to a second plasma treatment without a bias, resulting in a densified oxide layer with a final wet etch rate significantly lower than the initial rate.

Career Highlights: Praket Jha is currently affiliated with Applied Materials, Inc., a leading company in semiconductor manufacturing equipment. His extensive experience and innovative methodologies significantly contribute to the company's advancements in microelectronic technologies.

Collaborations: Throughout his career, Praket has collaborated with esteemed colleagues Jingmei Liang and Bok Hoen Kim, together fostering a culture of innovation and excellence in their work within the semiconductor industry.

Conclusion: Praket Prakash Jha’s significant contributions through his patents reflect his dedication to pushing the boundaries of microelectronics. His work not only exemplifies technological advancement but also positions him as a key influencer in the industry, paving the way for future innovations in semiconductor technology.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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