The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 11, 2022

Filed:

Mar. 12, 2020
Applicant:

Applied Materials, Inc., Santa Clara, CA (US);

Inventors:

Yong Sun, San Jose, CA (US);

Praket Prakash Jha, San Jose, CA (US);

Jingmei Liang, San Jose, CA (US);

Martin Jay Seamons, San Jose, CA (US);

DongQing Li, Fremont, CA (US);

Shashank Sharma, Fremont, CA (US);

Abhilash J. Mayur, Salinas, CA (US);

Wolfgang R. Aderhold, Cupertino, CA (US);

Assignee:

Applied Materials, Inc., Santa Clara, CA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/02 (2006.01); C23C 16/30 (2006.01); C23C 16/455 (2006.01); C23C 16/50 (2006.01); H01L 21/67 (2006.01); H01J 37/32 (2006.01);
U.S. Cl.
CPC ...
H01L 21/02345 (2013.01); C23C 16/308 (2013.01); C23C 16/45565 (2013.01); C23C 16/50 (2013.01); H01L 21/0214 (2013.01); H01L 21/0217 (2013.01); H01L 21/02126 (2013.01); H01L 21/02164 (2013.01); H01L 21/02167 (2013.01); H01L 21/02271 (2013.01); H01J 37/3244 (2013.01); H01J 2237/3321 (2013.01); H01L 21/67167 (2013.01); H01L 21/67207 (2013.01);
Abstract

A method of post-treating a dielectric film formed on a surface of a substrate includes positioning a substrate having a dielectric film formed thereon in a processing chamber and exposing the dielectric film to microwave radiation in the processing chamber at a frequency between 5 GHz and 7 GHz.


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