The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 11, 2023

Filed:

Oct. 14, 2020
Applicant:

Applied Materials, Inc., Santa Clara, CA (US);

Inventors:

Mandar B. Pandit, Milpitas, CA (US);

Man-Ping Cai, Saratoga, CA (US);

Wenhui Li, San Jose, CA (US);

Michael Wenyoung Tsiang, Milpitas, CA (US);

Praket Prakash Jha, San Jose, CA (US);

Jingmin Leng, Fremont, CA (US);

Assignee:

Applied Materials, Inc., Santa Clara, CA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/66 (2006.01); H01L 21/02 (2006.01); C23C 16/52 (2006.01); C23C 16/40 (2006.01); H01L 21/67 (2006.01);
U.S. Cl.
CPC ...
H01L 22/20 (2013.01); C23C 16/401 (2013.01); C23C 16/52 (2013.01); H01L 21/02164 (2013.01); H01L 21/67288 (2013.01);
Abstract

Embodiments of the present technology may include semiconductor processing methods that include depositing a film of semiconductor material on a substrate in a substrate processing chamber. The deposited film may be sampled for defects at greater than or about two non-contiguous regions of the substrate with scanning electron microscopy. The defects that are detected and characterized may include those of a size less than or about 10 nm. The methods may further include calculating a total number of defects in the deposited film based on the sampling for defects in the greater than or about two non-contiguous regions of the substrate. At least one deposition parameter may be adjusted as a result of the calculation. The adjustment to the at least one deposition parameter may reduce the total number of defects in a deposition of the film of semiconductor material.


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