The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 16, 2019

Filed:

Apr. 06, 2018
Applicant:

Varian Semiconductor Equipment Associates, Inc., Gloucester, MA (US);

Inventors:

Rajesh Prasad, Lexington, MA (US);

Ning Zhan, Scarsdale, NY (US);

Tzu-Yu Liu, Somerville, MA (US);

James Cournoyer, Rockport, MA (US);

Kyu-Ha Shim, Andover, MA (US);

Kwangduk Lee, Redwood City, CA (US);

John Lee Klocke, Kalispell, MT (US);

Eric J. Bergman, Kalispell, MT (US);

Terrance Lee, Oakland, CA (US);

Harry S. Whitesell, Sunnyvale, CA (US);

Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/033 (2006.01); H01L 21/3115 (2006.01); H01L 21/311 (2006.01);
U.S. Cl.
CPC ...
H01L 21/0337 (2013.01); H01L 21/31111 (2013.01); H01L 21/31155 (2013.01);
Abstract

A method may include forming a sacrificial mask on a device structure, the sacrificial mask comprising a carbon-based material. The method may further include etching memory structures in exposed regions of the sacrificial mask, implanting an etch-enhancing species into the sacrificial mask, and performing a wet etch to selectively remove the sacrificial mask at etch temperature, less than 350° C.


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