The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 07, 2021

Filed:

Sep. 13, 2019
Applicant:

Applied Materials, Inc., Santa Clara, CA (US);

Inventors:

Qintao Zhang, Mt. Kisco, NY (US);

Kyu-Ha Shim, Andover, MA (US);

Rajesh Prasad, Lexington, MA (US);

Assignee:

Applied Materials, Inc., Santa Clara, CA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/027 (2006.01); H01L 21/3105 (2006.01); H01L 21/311 (2006.01); H01L 21/3115 (2006.01); H01L 21/768 (2006.01); H01L 29/66 (2006.01); H01L 21/033 (2006.01);
U.S. Cl.
CPC ...
H01L 21/0276 (2013.01); H01L 21/31058 (2013.01); H01L 21/31138 (2013.01); H01L 21/31144 (2013.01); H01L 21/31155 (2013.01); H01L 21/76816 (2013.01); H01L 29/66795 (2013.01);
Abstract

A method of forming surface features in a hardmask layer, including etching a first surface feature into the hardmask layer, the first surface feature having a first critical dimension, performing an ion implantation process on the first surface feature to make the first surface feature resistant to subsequent etching processes, etching a second surface feature into the hardmask layer adjacent the first surface feature, wherein the first critical dimension is preserved.


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