The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 25, 2019
Filed:
Feb. 21, 2018
Varian Semiconductor Equipment Associates, Inc., Gloucester, MA (US);
Rajesh Prasad, Lexington, MA (US);
Steven Robert Sherman, Newton, MA (US);
Andrew M. Waite, Beverly, MA (US);
Sungho Jo, Chestnut Hill, MA (US);
Kyu-Ha Shim, Andover, MA (US);
Guy Oteri, Merrimac, MA (US);
Somchintana Norasetthekul, Boxford, MA (US);
Varian Semiconductor Equipment Associates, Inc., Gloucester, MA (US);
Abstract
As etching processes become more aggressive, increased etch resistivity of the hard mask is desirable. Methods of modulating the etch rate of the mask and optionally the underlying material are disclosed. An etch rate modifying species is implanted into the hard mask after the mask etching process is completed. This etch rate modifying species increases the difference between the etch rate of the mask and the etch rate of the underlying material to help preserve the integrity of the mask during a subsequent etching process. In some embodiments, the etch rate of the mask is decreased by the etch rate modifying species. In certain embodiments, the etch rate of the underlying material is increased by the etch rate modifying species.