The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 14, 2025
Filed:
Oct. 13, 2022
Applicant:
Applied Materials, Inc., Santa Clara, CA (US);
Inventors:
Scott Falk, Essex, MA (US);
Rajesh Prasad, Lexington, MA (US);
Sarah Michelle Bobek, Sunnyvale, CA (US);
Harry Whitesell, Sunnyvale, CA (US);
Kurt Decker-Lucke, Santa Clara, CA (US);
Kyu-Ha Shim, Santa Clara, CA (US);
Adaeze Osonkie, Beverly, MA (US);
Tomohiko Kitajima, San Jose, CA (US);
Assignee:
Applied Materials, Inc., Santa Clara, CA (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/3115 (2006.01); C23C 16/26 (2006.01); C23C 16/56 (2006.01); H01L 21/033 (2006.01); H01L 21/266 (2006.01); H01L 21/308 (2006.01); H01L 21/311 (2006.01); H01L 21/02 (2006.01);
U.S. Cl.
CPC ...
H01L 21/31155 (2013.01); C23C 16/26 (2013.01); C23C 16/56 (2013.01); H01L 21/0332 (2013.01); H01L 21/0337 (2013.01); H01L 21/266 (2013.01); H01L 21/3086 (2013.01); H01L 21/31105 (2013.01); H01L 21/31116 (2013.01); H01L 21/02115 (2013.01);
Abstract
Methods for depositing a hardmask with ions implanted at different tilt angles are described herein. By performing ion implantation to dope an amorphous carbon hardmask at multiple tilt angles, an evenly distributed dopant profiled can be created. The implant tilt angle will determine a dopant profile that enhances the carbon hardmask hardness.