The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 12, 2024
Filed:
Feb. 09, 2022
Applied Materials, Inc., Santa Clara, CA (US);
Ning Li, San Jose, CA (US);
Shuaidi Zhang, San Jose, CA (US);
Mihaela A. Balseanu, Sunnyvale, CA (US);
Qi Gao, Wilmington, MA (US);
Rajesh Prasad, Lexington, MA (US);
Tomohiko Kitajima, San Jose, CA (US);
Chang Seok Kang, Santa Clara, CA (US);
Deven Matthew Raj Mittal, Middleton, MA (US);
Kyu-Ha Shim, Andover, MA (US);
Applied Materials, Inc., Santa Clara, CA (US);
Abstract
Methods of manufacturing memory devices are provided. The methods improve the quality of a selectively deposited silicon-containing dielectric layer. The method comprises selectively depositing a silicon-containing dielectric layer in a recessed region of a film stack. The selectively deposited silicon-containing dielectric layer is then exposed to a high-density plasma and annealed at a temperature greater than 800 ° C. to provide a silicon-containing dielectric film having a wet etch rate of less than 4 Å/min.