Qi Gao

Title: Innovations by Inventor Qi Gao

Introduction

Qi Gao is a notable inventor based in Wilmington, MA (US), recognized for his contributions to the field of memory device manufacturing. With a total of 2 patents to his name, he has made significant advancements in the processing of silicon-containing dielectric layers.

Latest Patents

Gao's latest patents include methods for sequential plasma and thermal treatment, which enhance the quality of selectively deposited silicon-containing dielectric layers. This method involves selectively depositing a silicon-containing dielectric layer in a recessed region of a film stack, followed by exposure to high-density plasma and annealing at temperatures exceeding 800 °C. This process results in a silicon-containing dielectric film with a wet etch rate of less than 4 Å/min. Another patent focuses on techniques for improved low dielectric constant film processing. This method entails heating a substrate with a low dielectric constant layer and directing an ion implant treatment while maintaining the substrate temperature between 200 °C and 550 °C. The ion implant treatment utilizes a low weight ion species to achieve an implant depth of 40% to 175% of the layer thickness.

Career Highlights

Qi Gao is currently employed at Applied Materials, Inc., where he continues to innovate and develop new technologies in the semiconductor industry. His work has been instrumental in advancing the manufacturing processes of memory devices.

Collaborations

Gao collaborates with esteemed colleagues, including Rajesh Prasad and Ning Li, who contribute to his research and development efforts.

Conclusion

In summary, Qi Gao's innovative work in memory device manufacturing and his patents reflect his significant contributions to the field. His ongoing efforts at Applied Materials, Inc. continue to push the boundaries of technology in semiconductor processing.