The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 12, 2023
Filed:
May. 12, 2021
Applied Materials, Inc., Santa Clara, CA (US);
Rajesh Prasad, Lexington, MA (US);
Martin Seamons, San Jose, CA (US);
Shan Tang, Middleton, MA (US);
Qi Gao, Wilmington, MA (US);
Deven Raj Mittal, Middleton, MA (US);
Kyuha Shim, Andover, MA (US);
Applied Materials, Inc., Santa Clara, CA (US);
Abstract
A method may include providing a substrate having, on a first surface of the substrate, a low dielectric constant layer characterized by a layer thickness. The method may include heating the substrate to a substrate temperature in a range of 200° C. to 550° C.; and directing an ion implant treatment to the low dielectric constant layer, while the substrate temperature is in the range of 200° C. to 550° C. As such, the ion implant treatment may include implanting a low weight ion species, at an ion energy generating an implant depth equal to 40% to 175% of the layer thickness.