The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 11, 2025

Filed:

Jul. 21, 2021
Applicant:

Applied Materials, Inc., Santa Clara, CA (US);

Inventors:

Rui Cheng, San Jose, CA (US);

Rajesh Prasad, Lexington, MA (US);

Karthik Janakiraman, San Jose, CA (US);

Gautam K. Hemani, San Jose, CA (US);

Krishna Nittala, San Jose, CA (US);

Shan Tang, Middleton, MA (US);

Qi Gao, Wilmington, MA (US);

Assignee:

Applied Materials, Inc., Santa Clara, CA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/02 (2006.01); H01L 21/30 (2006.01); H01L 21/3215 (2006.01); H10D 30/01 (2025.01);
U.S. Cl.
CPC ...
H01L 21/02532 (2013.01); H01L 21/02592 (2013.01); H01L 21/3003 (2013.01); H01L 21/32155 (2013.01); H10D 30/0321 (2025.01);
Abstract

Exemplary methods of semiconductor processing may include forming a layer of amorphous silicon on a semiconductor substrate. The layer of amorphous silicon may be characterized by a first amount of hydrogen incorporation. The methods may include performing a beamline ion implantation process or plasma doping process on the layer of amorphous silicon. The methods may include removing hydrogen from the layer of amorphous silicon to a second amount of hydrogen incorporation less than the first amount of hydrogen incorporation.


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