Globalfoundries Inc.

Scott Beasor

Haiting Wang

Hui Zang

Ruilong Xie

Guowei Xu

Wei Zhao

Jiehui Shu

Shesh Mani Pandey

Yue Zhong

Jinping Liu

Sipeng Gu

Yiheng Xu

Zhenyu Hu

Chung Foong Tan

Erik Geiss

Judson Robert Holt

Hong Yu

Timothy James McArdle

George Robert Mulfinger

Jerome Ciavatti

Rui Chen

Tek Po Rinus Lee

Hao Zhang

Lakshmanan H Vanamurthy

Garo Jacques Derderian

Laertis Economikos

Guillaume Bouche

Jagar Singh

Vimal Kumar Kamineni

Viraj Yashawant Sardesai

Andy C Wei

Shahab Siddiqui

Sunil Kumar Singh

David Paul Brunco

Ravi Prakash Srivastava

Suraj Kumar Patil

Jeremy Austin Wahl

Tuhin Guha Neogi

Akshey Sehgal

Xinyuan Dou

Deniz Elizabeth Civay

Yuping Ren

Chih-Chiang Chang

Chang Seo Park

Qun Gao

Jae Gon Lee

Dongyue Yang

Liu Jiang

Shiv Kumar Mishra

Minghao Tang

Junsic Hong

Shimpei Yamaguchi

Zhiqing Li

Ankur Arya

Yong Mo Yang

Rongtao Lu

Ming Hao Tang

Beth Baumert

Mohamed Salama

Ting-Hsiang Hung

Todd B Abrams

Kyung Bum Koo

In the manufacture of a FinFET device, an isolation architecture is provided between gate and source/drain contact locations. The isolation architecture may include a low-k spacer layer and a contact etch stop layer. An upper portion of the isolation architecture is removed and replaced with a high-k, etch-selective spacer layer adapted to resist degradation during an etch to open the source/drain contact locations. The high-k spacer layer, in conjunction with a self-aligned contact (SAC) capping layer disposed over the gate and overlapping a sidewall of the isolation layer, forms an improved isolation structure that inhibits short circuits or parasitic capacitance between the gate and source/drain contacts.

FinFET with etch-selective spacer and self-aligned contact capping layer

An integrated circuit product is disclosed that includes a transistor device that includes a final gate structure, a gate cap, a low-k sidewall spacer positioned on and in contact with opposing sidewalls of the final gate structure, first and second contact etch stop layers (CESLs) located on opposite sides of the final gate structure, whereby the CESLs are positioned on and in contact with the low-k sidewall spacer, and a high-k spacer located on opposite sides of the final gate structure, wherein the high-k spacer is positioned in recesses formed in an upper portion of the CESLs.

Spacer structures for a transistor device

Integrated circuit devices include trenches in a material layer that divide the material layer into fins. With such devices, an insulator partially fills the trenches and contacts the material layer. The top surface of the insulator (e.g., the surface opposite where the insulator contacts the material layer) has a convex dome shape between at least two of the fins. The dome shape has a first thickness from (from the bottom of the trench) where the insulator contacts the fins, and a second thickness that is greater than the first thickness where the insulator is between the fins. Further, there is a maximum thickness difference between the first and second thicknesses at the midpoint between the fins (e.g., the highest point of the dome shape is at the midpoint between the fins). Also, the top surface of the first insulator has concave divots where the first insulator contacts the fins.

Fin reveal forming STI regions having convex shape between fins

A structure includes a first dielectric over a trench silicide (TS) contact and over a gate structure, and at least one cavity in the first dielectric. A metal resistor layer is on a bottom and sidewalls of the at least one cavity and extends over the first dielectric. A first contact is on the metal resistor layer over the first dielectric; and a second contact is on the metal resistor layer over the first dielectric. The metal resistor layer is over the TS contact and over the gate structure. Where a plurality of cavities are provided in the dielectric, a resistor structure formed by the metal resistor layer may have an undulating cross-section over the plurality of cavities and the dielectric.

Metal resistor structure in at least one cavity in dielectric over TS contact and gate structure

Device structures and fabrication methods for an on-chip resistor. A dielectric layer includes a trench with a bottom and a sidewall arranged to surround the bottom. A metal layer is disposed on the dielectric layer at the sidewall of the trench. The metal layer includes a surface that terminates the metal layer at the bottom of the trench to define a discontinuity that extends along a length of the trench.

Metal resistors with a non-planar configuration

Structures and fabrication methods for a field-effect transistor. First and second spacers are formed adjacent to opposite sidewalls of a gate structure. A section of the gate structure is partially removed with a first etching process to form a cut that extends partially through the gate structure. After partially removing the section of the gate structure with the first etching process, upper sections of the first and second sidewall spacers arranged above the gate structure inside the cut are at least partially removed. After at least partially removing the upper sections of the first and second sidewall spacers, the section of the gate structure is completely removed from the cut with a second etching process. A dielectric material is deposited inside the cut to form a dielectric pillar.

Methods and structures for a gate cut

Processes form integrated circuit apparatuses that include parallel fins, wherein the fins are patterned in a first direction, and parallel gate structures intersect the fins in a second direction perpendicular to the first direction. Also, source/drain structures are positioned on the fins between the gate structures, source/drain contacts are positioned on the source/drain structures, sidewall insulators are positioned between the gate structures and the source/drain contacts (wherein the sidewall insulators have a lower portion adjacent to the fins and an upper portion distal to the fins), and upper sidewall spacers are positioned between the upper portion of the sidewall insulators and the source/drain contacts.

FinFET having upper spacers adjacent gate and source/drain contacts

This disclosure is directed to an integrated circuit (IC) structure. The IC structure may include a semiconductor structure including two source/drain regions; a metal gate positioned on the semiconductor structure adjacent to and between the source/drain regions; a metal cap with a different metal composition than the metal gate and having a thickness in the range of approximately 0.5 nanometer (nm) to approximately 5 nm positioned on the metal gate; a first dielectric cap layer positioned above the semiconductor structure; an inter-layer dielectric (ILD) positioned above the semiconductor structure and laterally abutting both the metal cap and the metal gate, wherein an upper surface of the ILD has a greater height above the semiconductor structure than an upper surface of the metal gate; a second dielectric cap layer positioned on the ILD and above the metal cap; and a contact on and in electrical contact with the metal cap.

Integrated circuit structure to reduce soft-fail incidence and method of forming same

A method for producing a finFET to prevent gate contact and trench silicide (TS) electrical shorts. Embodiments include forming a finFET over a substrate, the finFET comprising an epi S/D region formed at sides of a gate; forming an &#x3b1;-Si layer in a recess over the epi S/D; forming an oxide layer over the &#x3b1;-Si layer; forming a non-TS isolation opening over the substrate; forming a low dielectric constant layer in the non-TS isolation opening; removing the oxide layer and &#x3b1;-Si layer; forming an opening over the gate and an opening over the epi S/D region; and forming a gate contact in the opening over the gate and an epi S/D contact over the opening over the epi S/D region.

FinFET device and method of manufacturing

A FinFET structure having reduced effective capacitance and including a substrate having at least two fins thereon laterally spaced from one another, a metal gate over fin tops of the fins and between sidewalls of upper portions of the fins, source/drain regions in each fin on opposing sides of the metal gate, and a dielectric bar within the metal gate located between the sidewalls of the upper portions of the fins, the dielectric bar being laterally spaced away from the sidewalls of the upper portions of the fins within the metal gate.

FinFET structure with dielectric bar containing gate to reduce effective capacitance, and method of forming same

One illustrative device disclosed includes a gate structure and a sidewall spacer positioned adjacent the gate structure, the sidewall spacer having an upper surface, wherein an upper portion of the gate structure is positioned above a level of the upper surface of the sidewall spacer. In this illustrative example, the device also includes a tapered upper surface on the upper portion of the gate structure and a gate cap, the gate cap being positioned above the tapered upper surface of the gate structure and above the upper surface of the sidewall spacer.

Transistor with a gate structure comprising a tapered upper surface

A method for forming a self-aligned sacrificial epitaxial cap for trench silicide and the resulting device are provided. Embodiments include a Si fin formed in a PFET region; a pair of Si fins formed in a NFET region; epitaxial S/D regions formed on ends of the Si fins; a replacement metal gate formed over the Si fins in the PFET and NFET regions; metal silicide trenches formed over the epitaxial S/D regions in the PFET and NEFT regions; a metal layer formed over top surfaces of the S/D region in the PFET region and top and bottom surfaces of the S/D regions in the NFET region, wherein the epitaxial S/D regions in the PFET and NFET regions are diamond shaped in cross-sectional view.

Self-aligned sacrificial epitaxial capping for trench silicide

One illustrative example of an overlay mark disclosed herein includes four quadrants (I-IV). Each quadrant of the mark contains an inner periodic structure and an outer periodic structure. Each of the outer periodic structures includes a plurality of outer features. Each of the inner periodic structures includes a plurality of first inner groups, each of the first inner groups having a plurality of first inner features, each first inner group being oriented such that there is an end-to-end spacing relationship between each first inner group and a selected one of the outer features.

Asymmetric overlay mark for overlay measurement

The present disclosure relates to semiconductor structures and, more particularly, to chamfered replacement gate structures and methods of manufacture. The structure includes: a recessed gate dielectric material in a trench structure; a plurality of recessed workfunction materials within the trench structure on the recessed gate dielectric material; a plurality of additional workfunction materials within the trench structure and located above the recessed gate dielectric material and the plurality of recessed workfunction materials; a gate metal within the trench structure and over the plurality of additional workfunction materials, the gate metal and the plurality of additional workfunction materials having a planar surface below a top surface of the trench structure; and a capping material over the gate metal and the plurality of additional workfunction materials.

Chamfered replacement gate structures

Methods of forming cross-coupling contacts for field-effect transistors and structures for field effect-transistors that include cross-coupling contacts. A sidewall spacer is formed adjacent to a gate structure, a dielectric cap is formed over the gate structure and the sidewall spacer, and an epitaxial semiconductor layer is formed adjacent to the sidewall spacer. A first portion of the dielectric cap is removed from over the sidewall spacer and the gate structure to expose a portion of a top surface of a gate electrode of the gate structure. A portion of the sidewall spacer is modified with an amorphization process. The modified portion of the sidewall spacer and the underlying gate dielectric layer are removed to expose a portion of a sidewall of the gate electrode. A cross-coupling contact is formed that directly connects the portions of the sidewall and top surface of the gate electrode with the epitaxial semiconductor layer.

Gate contact and cross-coupling contact formation

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Greenwich, NY, United States of America

Scott Beasor