The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 10, 2020
Filed:
Sep. 13, 2019
Applicant:
Globalfoundries Inc., Grand Cayman, KY;
Inventors:
Scott Beasor, Greenwich, NY (US);
Haiting Wang, Clifton Park, NY (US);
Sipeng Gu, Clifton Park, NY (US);
Jiehui Shu, Clifton Park, NY (US);
Assignee:
GLOBALFOUNDRIES INC., Grand Cayman, KY;
Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01C 7/22 (2006.01); H01C 1/012 (2006.01); H01C 17/00 (2006.01); H01L 23/522 (2006.01); H01L 49/02 (2006.01);
U.S. Cl.
CPC ...
H01C 7/22 (2013.01); H01C 1/012 (2013.01); H01C 17/00 (2013.01); H01L 23/5228 (2013.01); H01L 28/20 (2013.01);
Abstract
Device structures and fabrication methods for an on-chip resistor. A dielectric layer includes a trench with a bottom and a sidewall arranged to surround the bottom. A metal layer is disposed on the dielectric layer at the sidewall of the trench. The metal layer includes a surface that terminates the metal layer at the bottom of the trench to define a discontinuity that extends along a length of the trench.