Ballston Lake, NY, United States of America

Beth Baumert

USPTO Granted Patents = 3 

Average Co-Inventor Count = 5.0

ph-index = 2

Forward Citations = 409(Granted Patents)


Company Filing History:


Years Active: 2018-2019

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3 patents (USPTO):

Title: The Innovative Contributions of Beth Baumert

Introduction

Beth Baumert is a prominent inventor based in Ballston Lake, NY (US). She has made significant contributions to the field of semiconductor technology, holding a total of 3 patents. Her work focuses on advanced methods and systems for forming FinFET devices, which are crucial for modern electronic applications.

Latest Patents

One of her latest patents is titled "Methods, apparatus and system for forming a FinFET device comprising a first portion capable of operating at a first voltage and a second portion capable of operating at a second voltage." This patent describes a method for creating a hybrid oxide layer that allows different regions of a FinFET device to operate at distinct voltages. The process involves forming fins on both I/O and core device portions of a substrate, followed by the deposition of oxide layers that merge to create a hybrid layer.

Another notable patent is "Gate oxide formation through hybrid methods of thermal and deposition processes and method for producing the same." This invention outlines a method for thermally oxidizing silicon fins to form an oxide layer, followed by the application of an ALD oxide layer. The process includes several steps, such as forming a dielectric layer and recessing it to expose the silicon fins, ultimately enhancing the performance of semiconductor devices.

Career Highlights

Beth Baumert is currently employed at GlobalFoundries Inc., where she continues to innovate in the semiconductor industry. Her expertise in FinFET technology has positioned her as a key player in the development of next-generation electronic components.

Collaborations

Throughout her career, Beth has collaborated with notable colleagues, including Shahab Siddiqui and Abu Naser Zainuddin. These partnerships have contributed to her success and the advancement of her research.

Conclusion

Beth Baumert's innovative work in semiconductor technology and her contributions to FinFET device development highlight her importance in the field. Her patents reflect a commitment to advancing electronic technology, making her a significant figure in the industry.

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