Globalfoundries Inc.

Beth Baumert

Shahab Siddiqui

Haiting Wang

Jinping Liu

Shesh Mani Pandey

Yiheng Xu

Scott Beasor

Suresh Uppal

Wei Zhao

Yue Zhong

Luigi Pantisano

Abu Naser M Zainuddin

Ting-Hsiang Hung

Abu Naser Zainuddin

At least one method, apparatus and system are provided for forming a hybrid oxide layer for providing for a first region of a finFET device to operate at a first voltage and a second region of the finFET to operate at a second voltage. A first set of fins are formed on an I/O device portion, and a second set of fins are formed on a core device portion of a substrate. A first and a second oxide layers are deposited on the first and second set of fins, wherein they merge to form a hybrid oxide layer. The thickness of the second oxide layer is based on a first operating voltage for the I/O device portion. The hybrid layer is removed from the core device portion such that the I/O device portion operates at the first voltage and the core device portion operates at a second voltage.

Methods, apparatus and system for forming a FinFET device comprising a first portion capable of operating at a first voltage and a second portion capable of operating at a second voltage

A method of thermally oxidizing a Si fin to form an oxide layer over the Si fin and then forming an ALD oxide layer over the oxide layer and resulting device are provided. Embodiments include forming a plurality of Si fins on a Si substrate; forming a dielectric layer over the plurality of Si fins and the Si substrate; recessing the dielectric layer, exposing a top portion of the plurality of Si fins; thermally oxidizing surface of the top portion of the plurality of Si fins, an oxide layer formed; and forming an ALD oxide layer over the oxide layer.

Gate oxide formation through hybrid methods of thermal and deposition processes and method for producing the same

Methods of forming conformal low temperature gate oxides on a HV I/O and a core logic and the resulting devices are provided. Embodiments include providing a HV I/O and core logic laterally separated on a Si substrate, each having a fin; forming a gate oxide layer over each fin and the Si substrate; forming a silicon oxy-nitride layer over the gate oxide layer; forming a sacrificial oxide layer over the silicon oxy-nitride layer; removing the sacrificial oxide and silicon oxy-nitride layers and thinning the gate oxide layer; forming a second gate oxide layer over the thinned gate oxide layer; forming a silicon oxy-nitride layer over the second gate oxide layer; removing the silicon oxy-nitride and second gate oxide layers over the core logic fin portion; forming an IL over the core logic fin portion; and forming a HfOlayer over the second silicon oxy-nitride layer and ILs.

Thermal oxide equivalent low temperature ALD oxide for dual purpose gate oxide and method for producing the same

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Ballston Lake, NY, United States of America

Beth Baumert