Ting-Hsiang Hung

Title: Innovations of Ting-Hsiang Hung in Semiconductor Technology

Introduction

Ting-Hsiang Hung is a notable inventor based in Clifton Park, NY (US). He has made significant contributions to the field of semiconductor technology, particularly in the formation of gate oxides. His innovative methods have the potential to enhance the performance and efficiency of semiconductor devices.

Latest Patents

Ting-Hsiang Hung holds a patent titled "Gate oxide formation through hybrid methods of thermal and deposition processes and method for producing the same." This patent describes a method of thermally oxidizing a silicon fin to create an oxide layer over the silicon fin, followed by the formation of an atomic layer deposition (ALD) oxide layer over the oxide layer. The process involves several steps, including the formation of multiple silicon fins on a silicon substrate, the application of a dielectric layer, and the thermal oxidation of the fins to achieve the desired oxide layer. This innovative approach is crucial for advancing semiconductor technology.

Career Highlights

Ting-Hsiang Hung is currently employed at GlobalFoundries Inc., a leading semiconductor manufacturer. His work at the company focuses on developing advanced techniques for semiconductor fabrication, contributing to the ongoing evolution of the industry.

Collaborations

Throughout his career, Ting-Hsiang Hung has collaborated with esteemed colleagues such as Wei Zhao and Shahab Siddiqui. These collaborations have fostered a productive environment for innovation and have led to significant advancements in semiconductor technology.

Conclusion

Ting-Hsiang Hung's contributions to the field of semiconductor technology, particularly through his patented methods, highlight his role as an influential inventor. His work continues to impact the industry positively, paving the way for future innovations.