Globalfoundries Inc.

Ting-Hsiang Hung

Haiting Wang

Jinping Liu

Shesh Mani Pandey

Shahab Siddiqui

Yiheng Xu

Scott Beasor

Wei Zhao

Yue Zhong

Beth Baumert

A method of thermally oxidizing a Si fin to form an oxide layer over the Si fin and then forming an ALD oxide layer over the oxide layer and resulting device are provided. Embodiments include forming a plurality of Si fins on a Si substrate; forming a dielectric layer over the plurality of Si fins and the Si substrate; recessing the dielectric layer, exposing a top portion of the plurality of Si fins; thermally oxidizing surface of the top portion of the plurality of Si fins, an oxide layer formed; and forming an ALD oxide layer over the oxide layer.

Gate oxide formation through hybrid methods of thermal and deposition processes and method for producing the same

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Clifton Park, NY, United States of America

Ting-Hsiang Hung