The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 25, 2020

Filed:

Sep. 24, 2018
Applicant:

International Business Machines Corporation, Armonk, NY (US);

Inventors:

Ruqiang Bao, Niskayuna, NY (US);

Siddarth A. Krishnan, Newark, CA (US);

Unoh Kwon, Fishkill, NY (US);

Vijay Narayanan, New York, NY (US);

Attorneys:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 29/49 (2006.01); H01L 29/78 (2006.01); H01L 29/66 (2006.01); H01L 21/306 (2006.01); H01L 21/8238 (2006.01); H01L 21/84 (2006.01); H01L 27/092 (2006.01); H01L 27/12 (2006.01);
U.S. Cl.
CPC ...
H01L 29/4966 (2013.01); H01L 21/30608 (2013.01); H01L 21/823821 (2013.01); H01L 21/823842 (2013.01); H01L 21/845 (2013.01); H01L 27/0924 (2013.01); H01L 27/1211 (2013.01); H01L 29/66795 (2013.01); H01L 29/785 (2013.01);
Abstract

Semiconductor devices include at least one semiconductor fin in each of a first region and a second region. A first work function stack includes a bottom layer and a middle layer formed over the at least one semiconductor fin in the first region. A second work function stack includes a first layer and a second layer formed over the at least one semiconductor fin in the second region. The first layer is continuous with the bottom layer of the first work function stack and the second layer is continuous with the middle layer of the first work function stack, but has a smaller thickness than the middle layer.


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