The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 04, 2014
Filed:
Jan. 10, 2013
Intermolecular, Inc., San Jose, CA (US);
Hanhong Chen, Milpitas, CA (US);
Wim Deweerd, San Jose, CA (US);
Sandra G. Malhotra, Fort Collins, CO (US);
Hiroyuki Ode, Higashihiroshima, JP;
Intermolecular, Inc., San Jose, CA (US);
Abstract
A method for forming a DRAM MIM capacitor stack having low leakage current and low EOT involves the use of an compound high k dielectric material. The dielectric material further comprises a dopant. One component of the compound high k dielectric material is present in a concentration between about 30 atomic % and about 80 atomic and more preferably between about 40 atomic % and about 60 atomic %. In some embodiments, the compound high k dielectric material comprises an alloy of TiOand ZrOand further comprises a dopant of AlO. In some embodiments, the compound high k dielectric material comprises an admixture of TiOand HfOand further comprises a dopant of AlO.