The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 16, 2014
Filed:
Sep. 19, 2012
Hanhong Chen, Milpitas, CA (US);
Edward L Haywood, San Jose, CA (US);
Sandra G Malhotra, San Jose, CA (US);
Hiroyuki Ode, Higashihiroshima, JP;
Hanhong Chen, Milpitas, CA (US);
Edward L Haywood, San Jose, CA (US);
Sandra G Malhotra, San Jose, CA (US);
Hiroyuki Ode, Higashihiroshima, JP;
Intermolecular, Inc., San Jose, CA (US);
Elpida Memory, Inc., Tokyo, JP;
Abstract
A first electrode layer for a Metal-Insulator-Metal (MIM) DRAM capacitor is formed wherein the first electrode layer contains a conductive metal oxide formed using a high temperature, low pressure ALD process. The high temperature ALD process results in a layer with enhanced crystallinity, higher density, reduced shrinkage, and lower carbon contamination. The high temperature ALD process can be used for either or both the bottom electrode and the top electrode layers.