The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 11, 2015
Filed:
Dec. 20, 2012
Applicant:
Intermolecular, Inc., San Jose, CA (US);
Inventors:
Sergey Barabash, San Jose, CA (US);
Dipankar Pramanik, Saratoga, CA (US);
Assignee:
Intermolecular, Inc., San Jose, CA (US);
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/3065 (2006.01); H01L 29/78 (2006.01); H01L 21/3105 (2006.01); H01L 21/28 (2006.01); H01L 21/768 (2006.01);
U.S. Cl.
CPC ...
H01L 29/78 (2013.01); H01L 21/28255 (2013.01); H01L 21/3105 (2013.01); H01L 21/76823 (2013.01); H01L 21/76826 (2013.01);
Abstract
Conducting materials having narrow impurity conduction bands can reduce the number of high energy excitations, and can be prepared by a sequence of plasma treatments. For example, a dielectric layer can be exposed to a first plasma ambient to form vacancy sites, and the vacancy-formed dielectric layer can be subsequently exposed to a second plasma ambient to fill the vacancy sites with substitutional impurities.