The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 03, 2015
Filed:
Dec. 20, 2013
Applicant:
Intermolecular, Inc., San Jose, CA (US);
Inventors:
Sergey Barabash, San Jose, CA (US);
Dipankar Pramanik, Saratoga, CA (US);
Assignee:
Intermolecular, Inc., San Jose, CA (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 49/02 (2006.01); H01L 21/28 (2006.01); H01L 27/108 (2006.01); H01L 21/02 (2006.01);
U.S. Cl.
CPC ...
H01L 28/60 (2013.01); H01L 21/02186 (2013.01); H01L 21/02356 (2013.01); H01L 21/28229 (2013.01); H01L 27/1085 (2013.01); H01L 2924/05341 (2013.01); H01L 2924/10671 (2013.01);
Abstract
A dielectric layer can achieve a crystallography orientation similar to a base dielectric layer with a conductive layer disposed between the two dielectric layers. By providing a conductive layer having similar crystal structure and lattice parameters with the base dielectric layer, the crystallography orientation can be carried from the base dielectric layer, across the conductive layer to affect the dielectric layer. The process can be used to form capacitor structure for anisotropic dielectric materials, along the direction of high dielectric constant.