The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 19, 2016
Filed:
Dec. 19, 2014
Intermolecular, Inc., San Jose, CA (US);
Sergey Barabash, San Jose, CA (US);
Dipankar Pramanik, Saratoga, CA (US);
Intermolecular, Inc., San Jose, CA (US);
Abstract
Provided are method for determining switching conditions for production memory cells based on dopant flux during set and reset operations. One group of test memory cells, which are representative of the production memory cells, is subjected to a prolonged application of a set voltage, while another group is subjected to a prolonged application of a reset voltage. Different durations may be used for different cells in each group. A dopant concentration profile of a test component in each cell is determined for both groups. One cell from each group may be identified such that the changes in the dopant concentration profiles in these two identified cells are complementary. The profile complementarity indicates that these two identified cells had a similar dopant flux during voltage applications. Durations of set and reset voltage applications for these two cells may be used to determine switching conditions for production memory cells.