The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 05, 2021
Filed:
Dec. 16, 2019
Applicant:
Intermolecular, Inc., San Jose, CA (US);
Inventors:
Martin E. McBriarty, San Jose, CA (US);
Karl A. Littau, Palo Alto, CA (US);
Assignee:
INTERMOLECULAR, INC., San Jose, CA (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/67 (2006.01); H01L 21/66 (2006.01);
U.S. Cl.
CPC ...
H01L 21/67253 (2013.01); H01L 22/12 (2013.01); H01L 22/14 (2013.01); H01L 22/32 (2013.01); H01L 22/34 (2013.01);
Abstract
Techniques for creating a high aspect feature and testing the efficacy of a gas-phase deposition process are provided. An example of a method for thin film deposition in a high aspect ratio feature includes preparing a first substrate for a material deposition process, depositing a plurality of spacers on a top surface of the first substrate, disposing a bottom surface of a second substrate on the plurality of spacers, and performing a gas-phase material deposition on the first substrate and the second substrate.