Martin E McBriarty

Title: Martin E McBriarty: Innovator in Thermal Atomic Layer Etching

Introduction

Martin E McBriarty is a notable inventor based in San Jose, CA (US). He has made significant contributions to the field of materials science, particularly in the area of atomic layer etching and thin film deposition. With a total of 2 patents to his name, McBriarty's work has advanced the capabilities of semiconductor manufacturing.

Latest Patents

One of McBriarty's latest patents is focused on selective thermal atomic layer etching. This innovative technique utilizes a novel series of halogen-free organic acids cycled with an oxidant as a co-reactant to etch metals. This method enhances precision in the etching process, which is crucial for the fabrication of microelectronic devices. Another significant patent involves thin film deposition in a high aspect ratio feature. This patent outlines techniques for creating high aspect features and testing the efficacy of a gas-phase deposition process. The method includes preparing a substrate for material deposition, depositing spacers, and performing gas-phase material deposition on both the first and second substrates.

Career Highlights

Throughout his career, McBriarty has worked with prominent companies in the semiconductor industry, including Intermolecular, Inc. and Versum Materials US, LLC. His experience in these organizations has allowed him to refine his expertise in material deposition and etching techniques.

Collaborations

Some of McBriarty's notable coworkers include Karl Anthony Littau and Ravindra Kanjolia. Their collaborative efforts have contributed to advancements in the technologies related to his patents.

Conclusion

Martin E McBriarty's innovative work in selective thermal atomic layer etching and thin film deposition has made a significant impact on the semiconductor industry. His contributions continue to influence the development of advanced manufacturing techniques.