The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 01, 2017
Filed:
Dec. 23, 2013
Intermolecular Inc., San Jose, CA (US);
Lg Display Co., Ltd.;
Sang Lee, San Jose, CA (US);
Khaled Ahmed, Anaheim, CA (US);
Youn-Gyoung Chang, Gyeonggi-do, KR;
Min-Cheol Kim, Gyeonggi-do, KR;
Minh Huu Le, San Jose, CA (US);
Kwon-Sik Park, Gangnam-gu, KR;
Woosup Shin, Gyeonggi-do, KR;
Intermolecular, Inc., San Jose, CA (US);
LG Display Co., Ltd., Seoul, KR;
Abstract
Embodiments described herein provide method for forming crystalline indium-gallium-zinc oxide (IGZO). A substrate is provided. A seed layer is formed above the substrate. The seed layer has a crystalline structure that is substantially dominant along the c-axis. An IGZO layer is formed above the seed layer. The seed layer may include zinc oxide. A stack of alternating seed layers and IGZO layers may be formed.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile