The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 28, 2017
Filed:
Dec. 02, 2013
Intermolecular Inc., San Jose, CA (US);
Globalfoundries, Inc., Grand Cayman, KY;
Albert Sanghyup Lee, Cupertino, CA (US);
Paul Besser, Sunnyvale, CA (US);
Kisik Choi, San Jose, CA (US);
Edward L Haywood, San Jose, CA (US);
Hoon Kim, San Jose, CA (US);
Salil Mujumdar, San Jose, CA (US);
Intermolecular, Inc., San Jose, CA (US);
GLOBALFOUNDRIES, INC., Grand Cayman, KY;
Abstract
ALD of HfAlCfilms using hafnium chloride (HfCl) and Trimethylaluminum (TMA) precursors can be combined with post-deposition anneal processes and ALD liners to control the device characteristics in high-k metal-gate devices. Variation of the HfClpulse time allows for control of the Al % incorporation in the HfAlCfilm in the range of 10-13%. Combinatorial process tools can be employed for rapid electrical and materials characterization of various materials stacks. The effective work function (EWF) in metal oxide semiconductor capacitor (MOSCAP) devices with the HfAlCwork function layer coupled with ALD deposited HfOhigh-k gate dielectric layers was quantified to be mid-gap at ˜4.6 eV. Thus, HfAlCis a promising metal gate work function material allowing for the tuning of device threshold voltages (V) for anticipated multi-Vintegrated circuit (IC) devices.