Albert Sanghyup Lee

Title: Albert Sanghyup Lee: Innovator in Semiconductor Technology

Introduction: Albert Sanghyup Lee, based in Cupertino, CA, is a prominent inventor with a portfolio that includes 12 patents focused on advancements in semiconductor technology. His work is particularly significant in the development of materials for metal gate work function optimization in MOS devices.

Latest Patents: Lee's latest patents include a groundbreaking process involving atomic layer deposition (ALD) of HfAlC as a metal gate workfunction material in MOS devices. This innovation employs hafnium chloride (HfCl) and trimethylaluminum (TMA) precursors, combined with post-deposition anneal processes and ALD liners to enhance the device characteristics of high-k metal-gate devices. Notably, by varying the HfCl pulse time, Lee allows for precise control of aluminum incorporation in the HfAlC films, achieving a range between 10-13%. His research also implements combinatorial process tools for rapid electrical and materials characterization of various material stacks. The effective work function (EWF) determined in metal oxide semiconductor capacitor (MOSCAP) devices demonstrates a mid-gap value of approximately 4.6 eV, establishing HfAlC as a promising metal gate work function material that facilitates the tuning of device threshold voltages for multi-V integrated circuit (IC) devices. Additionally, Lee addresses the challenge of native oxide growth on germanium, silicon germanium, and InGaAs by introducing a reduction process using gases or plasma to eliminate or minimize oxide re-growth, which enhances capacitive equivalent thickness (CET) and effective oxide thickness (EOT) for high-k and low-k metal-oxide layers.

Career Highlights: Throughout his career, Lee has made substantial contributions to the semiconductor field while working at notable companies including Intermolecular, Inc. and Applied Materials, Inc. His expertise in material science and semiconductor technology has been instrumental in driving innovation in these organizations.

Collaborations: Lee has collaborated with distinguished professionals in the field, including Annamalai Lakshmanan and Bok Hoen Kim. Their collaborative efforts have contributed to advancements in semiconductor materials and device fabrication.

Conclusion: Albert Sanghyup Lee is a noteworthy inventor whose contributions to semiconductor technology and material sciences have paved the way for innovations in the industry. His patents not only enhance device performance but also reflect a commitment to advancing semiconductor technologies, making significant impacts on future integrated circuit design and functionality.