Intermolecular, Inc.

Applied Materials, Inc.

Kabushiki Kaisha Toshiba

Sandisk 3D LLC

Globalfoundries Inc.

Albert Sanghyup Lee

Annamalai Lakshmanan

Tony P Chiang

Li-Qun Xia

Bok Hoen Kim

Jason Wright

Paul Raymond Besser

Hoon Sik Kim

Takeshi Yamaguchi

Imran Hashim

Kisik Choi

Christopher Dennis Bencher

Chi-I Lang

Zhenjiang Cui

Tim Minvielle

Jinhong Tong

Vidyut Gopal

Frank Greer

Nagarajan Rajagopalan

Amol Ramesh Joshi

Edward L Haywood

Randall Higuchi

Kevin Kashefi

Chien-Lan Hsueh

Ju-Hyung Lee

Meiyee Shek

J Watanabe

Salil Mujumdar

Chris Ngai

Abhijit Pethe

Mei-Yee Shek Le

Tom Nowak

ALD of HfAlCfilms using hafnium chloride (HfCl) and Trimethylaluminum (TMA) precursors can be combined with post-deposition anneal processes and ALD liners to control the device characteristics in high-k metal-gate devices. Variation of the HfClpulse time allows for control of the Al % incorporation in the HfAlCfilm in the range of 10-13%. Combinatorial process tools can be employed for rapid electrical and materials characterization of various materials stacks. The effective work function (EWF) in metal oxide semiconductor capacitor (MOSCAP) devices with the HfAlCwork function layer coupled with ALD deposited HfOhigh-k gate dielectric layers was quantified to be mid-gap at &#x2dc;4.6 eV. Thus, HfAlCis a promising metal gate work function material allowing for the tuning of device threshold voltages (V) for anticipated multi-Vintegrated circuit (IC) devices.

Atomic layer deposition of HfAlC as a metal gate workfunction material in MOS devices

Native oxide growth on germanium, silicon germanium, and InGaAs undesirably affects CET (capacitive equivalent thickness) and EOT (effective oxide thickness) of high-k and low-k metal-oxide layers formed on these semiconductors. Even if pre-existing native oxide is initially removed from the bare semiconductor surface, some metal oxide layers are oxygen-permeable in thicknesses below about 25 &#x212b; thick. Oxygen-containing species used in the metal-oxide deposition process may diffuse through these permeable layers, react with the underlying semiconductor, and re-grow the native oxide. To eliminate or mitigate this re-growth, the substrate is exposed to a gas or plasma reductant (e.g., containing hydrogen). The reductant diffuses through the permeable layers to react with the re-grown native oxide, detaching the oxygen and leaving the un-oxidized semiconductor. The reduction product(s) resulting from the reaction may then be removed from the substrate (e.g., driven off by heat).

Reduction of native oxides by annealing in reducing gas or plasma

In some embodiments of the present invention, methods of using one or more small spot showerhead apparatus to deposit materials using CVD, PECVD, ALD, or PEALD on small spots in a site isolated, combinatorial manner are described. The small spot showerheads may be configured within a larger combinatorial showerhead to allow multi-layer film stacks to be deposited in a combinatorial manner.

Combinatorial approach for screening of ALD film stacks

Systems and methods for preparing resistive switching memory devices such as resistive random access memory (ReRAM) devices wherein both oxide and nitride layers are deposited in a single chamber are provided. Various oxide and nitride based layers in the ReRAM device such as the switching layer, current-limiting layer, and the top electrode (and optionally the bottom electrode) are deposited in the single chamber. By fabricating the ReRAM device in a single chamber, throughput is increased and cost is decreased. Moreover, processing in a single chamber reduces device exposure to air and to particulates, thereby minimizing device defects.

ReRAM stacks preparation by using single ALD or PVD chamber

Atomic layer deposition (ALD) can be used to form a dielectric layer of zirconium oxide for use in a variety of electronic devices. Forming the dielectric layer includes depositing zirconium oxide using atomic layer deposition. A method of atomic layer deposition to produce a metal-rich metal oxide comprises the steps of providing a silicon substrate in a reaction chamber, pulsing a zirconium precursor for a predetermined time to deposit a first layer, and oxidizing the first layer with water vapor to produce the metal-rich metal oxide. The metal-rich metal oxide has superior properties for non-volatile resistive-switching memories.

Atomic layer deposition of zirconium oxide for forming resistive-switching materials

A resistive memory device having an in-situ nitride initiation layer is disclosed. The nitride initiation layer is formed above the first electrode, and the metal oxide switching layer is formed above the nitride initiation layer to prevent oxidation of the first electrode. The nitride initiation layer may be a metal nitride layer that is formed by atomic layer deposition in the same chamber in which the metal oxide switching layer is formed. The nitride initiation layer and metal oxide switching layer may alternatively be formed in a chemical vapor deposition (CVD) chamber or a physical vapor deposition (PVD) chamber.

In-situ nitride initiation layer for RRAM metal oxide switching material

In some embodiments, the present invention discloses plasma processing at interfaces of an ALD metal oxide film with top and bottom electrodes to improve the ReRAM device characteristics. The interface processing can comprise an oxygen inhibitor step with a bottom polysilicon electrode to prevent oxidation of the polysilicon layer, enhancing the electrical contact of the metal oxide film with the polysilicon electrode. The interface processing can comprise an oxygen enrichment step with a top metal electrode to increase the resistivity of the metal oxide layer, providing an integrated current limiter layer.

Plasma processing of metal oxide films for resistive memory device applications

Methods and apparatus are provided for processing a substrate with a hermetic dielectric layer. In one aspect, the invention provides a method for processing a substrate including providing the substrate to a processing chamber, introducing a processing gas comprising a reducing agent, an oxygen containing compound, and an organosilicon compound, into the processing chamber, generating a plasma from a dual frequency RF power source, and depositing a dielectric material comprising silicon, carbon, and oxygen. The dielectric material may be used as an etch stop, an anti-reflective coating, or a passivation layer.

Hermetic low dielectric constant layer for barrier applications

Methods are provided for processing a substrate for depositing an adhesion layer between a conductive material and a dielectric layer. In one aspect, the invention provides a method for processing a substrate including positioning a substrate having a conductive material disposed thereon, introducing a reducing compound or a silicon based compound, exposing the conductive material to the reducing compound or the silicon based compound, and depositing a silicon carbide layer without breaking vacuum.

Adhesion improvement for low k dielectrics to conductive materials

Methods and apparatus are provided for processing a substrate with a bilayer barrier layer. In one aspect, the invention provides a method for processing a substrate including depositing a nitrogen containing barrier layer on a substrate surface and then depositing a nitrogen free barrier layer thereon. The barrier layer may be deposited over dielectric materials, conductive materials, or both. The bilayer barrier layer may also be used as an etch stop, an anti-reflective coating, or a passivation layer.

Bi-layer approach for a hermetic low dielectric constant layer for barrier applications

Methods for processing a substrate are disclosed. In one embodiment of the invention, a substrate with a first layer and an oxide layer on the substrate is placed in a processing chamber. The oxide layer is removed while the substrate is at a first temperature in the processing chamber. A second layer is then formed on the first layer while the substrate is at a second temperature in the processing chamber.

Method of processing a substrate in a processing chamber

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Cupertino, CA, United States of America

Albert Sanghyup Lee