The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 15, 2006

Filed:

Jul. 09, 2004
Applicants:

Albert Lee, Cupertino, CA (US);

Annamalai Lakshmanan, Santa Clara, CA (US);

Bok Hoen Kim, San Jose, CA (US);

Li-qun Xia, Santa Clara, CA (US);

Mei-yee Shek Le, Mountain View, CA (US);

Inventors:

Albert Lee, Cupertino, CA (US);

Annamalai Lakshmanan, Santa Clara, CA (US);

Bok Hoen Kim, San Jose, CA (US);

Li-Qun Xia, Santa Clara, CA (US);

Mei-Yee Shek Le, Mountain View, CA (US);

Assignee:

Applied Materials, Santa Clara, CA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/31 (2006.01);
U.S. Cl.
CPC ...
Abstract

Methods and apparatus are provided for processing a substrate with a bilayer barrier layer. In one aspect, the invention provides a method for processing a substrate including depositing a nitrogen containing barrier layer on a substrate surface and then depositing a nitrogen free barrier layer thereon. The barrier layer may be deposited over dielectric materials, conductive materials, or both. The bilayer barrier layer may also be used as an etch stop, an anti-reflective coating, or a passivation layer.


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