Fremont, CA, United States of America

Annamalai Lakshmanan

This inventor holds 28 USPTO granted patents and 11 published patent applications, primarily in Metal Film Processing. Top assignee: Applied Materials, Inc.. Active years: 2005-2026.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Annamalai Lakshmanan. Retrieved from https://idiyas.com/inventor/annamalai-lakshmanan

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Calculating rank
USPTO Granted Patents = 28 

% Patents Active = 60.7

Average Co-Inventor Count = 5.6

ph-index = 5

Forward Citations = 87(Granted Patents)


Location History:

  • Santa Clara, CA (US) (2005 - 2015)
  • Fremont, CA (US) (2014 - 2024)

Company Filing History:


Years Active: 2005-2026

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Areas of Expertise:
Metal Gapfill
Resistivity Control
Substrate Processing
Metal Silicide
Doping Control
Nanowire Structures
Barrier Applications
CVD Chambers
Plasma Deposition
Dielectric Layers
Adhesion Improvement
Oxide Layer Engineering
28 patents (USPTO):Explore Patents

Title: Innovations by Annamalai Lakshmanan: Pioneering Metal Film Deposition Techniques

Introduction

Annamalai Lakshmanan is a prominent inventor based in Fremont, CA, who has made significant contributions to the field of materials science and engineering. With a remarkable portfolio of 25 patents, Lakshmanan's work focuses on innovative methods for depositing metal films, utilizing advanced organometallic precursors. His inventions not only enhance the properties of metal films but also pave the way for future advancements in various technological applications.

Latest Patents

Among his latest patents, Lakshmanan discusses a method of depositing metal films using organometallic precursors. This method involves exposing a substrate surface to an organometallic precursor composed of elements such as molybdenum (Mo), tungsten (W), and ruthenium (Ru), in combination with an iodine-containing reactant. The objective is to form a carbon-less iodine-containing metal film, which is advantageous as it results in lower carbon content—greater than or equal to 95% metal species on an atomic basis—without the need for oxidizing or reducing agents.

Additionally, Lakshmanan's inventions include methods and apparatus for processing substrates, wherein a silicide layer is deposited within a defined feature on a substrate. This involves forming a metal liner or seed layer using methods such as physical vapor deposition and chemical vapor deposition, without causing any vacuum breaks, thus maintaining the integrity and performance of the substrate.

Career Highlights

Lakshmanan currently works at Applied Materials, Inc., an industry leader in materials engineering solutions. His innovative contributions have been instrumental in developing techniques that improve the efficiency and effectiveness of metal film deposition processes. With a total of 25 patents to his name, Lakshmanan stands out as a leading figure in the advancement of substrate processing technologies.

Collaborations

Throughout his career, Lakshmanan has collaborated with other talented scientists and engineers, including notable coworkers such as Paul F. Ma and Bok Hoen Kim. These collaborations have fostered a dynamic exchange of ideas, contributing to the significant advancements in the field of materials science and expanding the horizons of innovation.

Conclusion

Annamalai Lakshmanan's work exemplifies the impact of innovation on modern technology. His contributions to metal film deposition are not only revolutionary but also demonstrate a clear commitment to advancing the field. As he continues to develop new techniques and technologies, Lakshmanan's inventions will undoubtedly shape the future of materials engineering.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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