The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 25, 2024

Filed:

Jan. 03, 2023
Applicant:

Applied Materials, Inc., Santa Clara, CA (US);

Inventors:

Yixiong Yang, Fremont, CA (US);

Jacqueline S. Wrench, San Jose, CA (US);

Yong Yang, Boston, MA (US);

Srinivas Gandikota, Santa Clara, CA (US);

Annamalai Lakshmanan, Fremont, CA (US);

Joung Joo Lee, San Jose, CA (US);

Feihu Wang, San Jose, CA (US);

Seshadri Ganguli, Sunnyvale, CA (US);

Assignee:

Applied Materials, Inc., Santa Clara, CA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H10B 12/00 (2023.01); C23C 16/455 (2006.01); H01L 21/02 (2006.01); H01L 21/285 (2006.01); H01L 21/8234 (2006.01);
U.S. Cl.
CPC ...
H10B 12/488 (2023.02); C23C 16/45553 (2013.01); H01L 21/02491 (2013.01); H01L 21/02631 (2013.01); H01L 21/2855 (2013.01); H01L 21/28556 (2013.01); H01L 21/28568 (2013.01); H01L 21/823431 (2013.01); H01L 21/823475 (2013.01);
Abstract

Methods for DRAM device with a buried word line are described. The method includes forming a metal cap layer and a molybdenum conductor layer in a feature on a substrate. The method includes depositing the metal cap layer on the substrate by physical vapor deposition (PVD) and depositing the molybdenum conductor layer by atomic layer deposition (ALD) on the metal cap layer.


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