Sunnyvale, CA, United States of America

Seshadri Ganguli

This inventor holds 98 USPTO granted patents and 22 published patent applications and 1 EPO patent, primarily in Atomic Layer Deposition (CPC class H01L21-28562). Top assignee: Applied Materials, Inc.. Active years: 2000-2026.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Seshadri Ganguli. Retrieved from https://idiyas.com/inventor/seshadri-ganguli

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

USPTO Granted Patents = 98 

% Patents Active = 78.6

 

Average Co-Inventor Count = 5.3

ph-index = 18

Forward Citations = 2,155(Granted Patents)

Forward Citations (Not Self Cited) = 1,980(Dec 10, 2025)


Inventors with similar research interests:


Location History:

  • Santa Clara, CA (US) (2001 - 2005)
  • Sunnyvale, CA (US) (2000 - 2024)

Company Filing History:


Years Active: 2000-2026

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Areas of Expertise:
Atomic Layer Deposition
Oxygen-Containing Precursors
Conformal Molybdenum Deposition
Barrier Performance
Selective Deposition
Copper Metallization
DRAM Structures
Metal Films
Silicon-Based Dielectric
Gap Fill Methods
Transistor Integration
Thin Films
98 patents (USPTO):Explore Patents

Title: **The Innovative Contributions of Seshadri Ganguli in Semiconductor Technologies**

Introduction

Seshadri Ganguli, based in Sunnyvale, California, is an accomplished inventor recognized for his significant contributions to the field of semiconductor technologies. With an impressive portfolio of 88 patents, his work primarily focuses on enhancing the performance and efficiency of electronic devices.

Latest Patents

Ganguli's latest patents reflect cutting-edge advancements in memory device fabrication and semiconductor manufacturing processes. One notable invention, titled "Enhancing Gapfill Performance of DRAM Word Line," describes methods to improve the formation of memory devices using a molybdenum silicide nucleation layer. The innovative process involves soaking the substrate in a titanium precursor before conducting a bulk molybdenum gap fill process, further optimizing device performance. Another key patent, "Integrated Dipole Region for Transistor," outlines methods for manufacturing electronic devices with an integrated dipole region that satisfies reduced thickness and lower thermal budget requirements. This invention incorporates an interfacial layer, metal film, and a high-κ dielectric layer to enhance electronic device functionality.

Career Highlights

Seshadri Ganguli is currently employed by Applied Materials, Inc., a leading company in the semiconductor and materials engineering sector. His work there emphasizes developing innovative solutions that improve device performance and manufacturing efficiency. Throughout his career, Ganguli has consistently pushed the boundaries of semiconductor technology, making substantial contributions that have a lasting impact on the industry.

Collaborations

Collaboration is a key aspect of innovation, and Ganguli has worked alongside notable coworkers such as Mei Yin Chang and Christophe Marcadal. These partnerships have fostered a creative environment that fuels the discovery and development of groundbreaking technologies in semiconductor devices.

Conclusion

Seshadri Ganguli's dedication to innovation and excellence in semiconductor technologies is evident through his numerous patents and contributions at Applied Materials, Inc. His latest inventions not only demonstrate his technical prowess but also position him as a leading figure in the ongoing evolution of electronic devices. As technology continues to advance, Ganguli's work will undoubtedly play a crucial role in shaping the future of the semiconductor industry.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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