The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 08, 2024
Filed:
May. 05, 2021
Applied Materials, Inc., Santa Clara, CA (US);
Yong Yang, Tengzhou, CN;
Kunal Bhatnagar, Chandler, AZ (US);
Srinivas Gandikota, Santa Clara, CA (US);
Seshadri Ganguli, Sunnyvale, CA (US);
Jose Alexandro Romero, Scottsdale, AZ (US);
Mandyam Sriram, San Jose, CA (US);
Mohith Verghese, Phoenix, AZ (US);
Jacqueline S. Wrench, San Jose, CA (US);
Yixiong Yang, Fremont, CA (US);
Applied Materials, Inc., Santa Clara, CA (US);
Abstract
Methods of forming memory devices are described. A molybdenum silicide nucleation layer is formed, and the substrate is soaked in a titanium precursor prior to a bulk molybdenum gap fill process. In other embodiments, a molybdenum silicide film is formed in a first process cycle and a second process cycle is performed where the substrate is exposed to a titanium precursor. In further embodiments, a substrate having at least one feature thereon is exposed to a first titanium precursor and a nitrogen-containing reactant. The substrate is then soaked in a second titanium precursor, and then is exposed to a first molybdenum precursor followed by exposure to a silane to form a molybdenum silicide layer on a surface of the substrate.