The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 04, 2026
Filed:
Sep. 09, 2022
Applied Materials, Inc., Santa Clara, CA (US);
Zhihui Liu, Sunnyvale, CA (US);
Seshadri Ganguli, Sunnyvale, CA (US);
Tianyi Huang, Santa Clara, CA (US);
Yixiong Yang, Fremont, CA (US);
Srinivas Gandikota, Santa Clara, CA (US);
Yuanhua Zheng, Burlingame, CA (US);
Yongjing Lin, San Jose, CA (US);
Keyur Karandikar, San Jose, CA (US);
Elizabeth Mao, Sunnyvale, CA (US);
Applied Materials, Inc., Santa Clara, CA (US);
Abstract
Methods of manufacturing and processing semiconductor devices (i.e., electronic devices) are described. The methods include treating a surface of a metal gate stack with a radical treatment. The radical treatment may be used to treat one or more layers or surfaces of layers in the metal gate stack. The radical treatment may be performed once or multiple times during the methods described herein. The radical treatment comprises flowing one or more of nitrogen radicals (N*) and hydrogen radicals (H*) over the surface of the metal gate stack.