San Jose, CA, United States of America

Yongjing Lin

This inventor holds 17 USPTO granted patents and 13 published patent applications, primarily in Semiconductor Manufacturing. Top assignee: Applied Materials, Inc.. Active years: 2021-2026.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Yongjing Lin. Retrieved from https://idiyas.com/inventor/yongjing-lin

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Calculating rank
USPTO Granted Patents = 17 

% Patents Active = 64.7

Average Co-Inventor Count = 8.5

ph-index = 1

Forward Citations = 10(Granted Patents)


Company Filing History:


Years Active: 2021-2026

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Areas of Expertise:
Metal-Containing Films
Titanium Nitride
PMOS Transistor
NMOS Device
3D NAND
Plasma Treatment
Dipole Flow
Atomic Layer Deposition
High-k Reliability
Gapfill Processes
V-NAND
Transistor Performance
17 patents (USPTO):Explore Patents

Title: Innovations by Inventor Yongjing Lin

Introduction

Yongjing Lin is an accomplished inventor based in San Jose, California. With a total of 11 patents to his name, Lin has made significant contributions to the field of semiconductor technology. His innovative approaches and methods have paved the way for advancements in memory structures and electronic devices.

Latest Patents

Among Lin's latest patents is the "Liner for V-NAND Word Line Stack." This patent discusses methods of forming memory structures, specifically focusing on the formation of 3D NAND devices. The embodiments of this invention include a metal nitride barrier layer, an α-tungsten layer, and a bulk metal material. The barrier layer is composed of TiXN or TaXN material, with X being a metal selected from options such as aluminum (Al), silicon (Si), tungsten (W), lanthanum (La), yttrium (Yt), strontium (Sr), and magnesium (Mg).

Another key patent is the "P-type Dipole for P-FET." This invention details methods for forming and processing semiconductor devices. It describes electronic devices that comprise a dipole region, featuring an interlayer dielectric, a high-κ dielectric material, and a specific dipole layer. The dipole layer may include materials such as titanium aluminum nitride (TiAlN), titanium tantalum nitride (TiTaN), titanium oxide (TiO), tantalum oxide (TaO), and titanium aluminum carbide (TiAlC).

Career Highlights

Yongjing Lin is currently affiliated with Applied Materials, Inc., where he continues to develop and refine cutting-edge technologies in semiconductor manufacturing. His work has significantly impacted the efficiency and effectiveness of memory storage solutions in electronic devices.

Collaborations

Lin's journey has seen him collaborate with notable coworkers, including Yixiong Yang and Shih Chung Chen. Together, they have contributed to various innovative projects and developments within their field, leading to the creation of advanced technological solutions.

Conclusion

Yongjing Lin exemplifies the spirit of innovation, demonstrating how a dedicated inventor can drive technological advancements. With a remarkable portfolio of patents and a commitment to developing new semiconductor technologies, Lin's contributions will continue to influence the industry for years to come.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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