The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 30, 2024
Filed:
Dec. 21, 2021
Applied Materials, Inc., Santa Clara, CA (US);
Yongjing Lin, San Jose, CA (US);
Karla M Bernal Ramos, San Jose, CA (US);
Luping Li, Santa Clara, CA (US);
Shih Chung Chen, Cupertino, CA (US);
Jacqueline S. Wrench, San Jose, CA (US);
Yixiong Yang, Fremont, CA (US);
Steven C. H. Hung, Sunnyvale, CA (US);
Srinivas Gandikota, Santa Clara, CA (US);
Naomi Yoshida, Sunnyvale, CA (US);
Lin Dong, San Jose, CA (US);
Applied Materials, Inc., Santa Clara, CA (US);
Abstract
Methods of forming and processing semiconductor devices are described. Certain embodiments related to electronic devices which comprise a dipole region having an interlayer dielectric, a high-κ dielectric material, and a dipole layer. The dipole layer comprises one or more of titanium lanthanum nitride (TiLaN), titanium yttrium nitride (TiYN), titanium strontium nitride (TiSrN), titanium magnesium nitriride (TiMgN, titanium aluminum nitride (TiAlN), titanium tantalum nitride (TiTaN), hafnium carbide (HfC), hafnium nitride (HfN), hafnium oxynitride (HfON), hafnium oxycarbide (HfOC), hafnium carbide aluminum (HfCAl), hafnium aluminum nitride (HfAlN), or hafnium carbonitride (HfCN).