San Jose, CA, United States of America

Lin Dong

USPTO Granted Patents = 17 

Average Co-Inventor Count = 8.6

ph-index = 3

Forward Citations = 45(Granted Patents)


Location History:

  • Sunnyvale, CA (US) (2017)
  • San Jose, CA (US) (2017 - 2024)

Company Filing History:


Years Active: 2017-2025

where 'Filed Patents' based on already Granted Patents

17 patents (USPTO):

Title: An Insight into the Innovations of Lin Dong

Introduction

Lin Dong, an esteemed inventor based in San Jose, California, has made significant contributions to the field of semiconductor technology. With an impressive portfolio of 17 patents, his work is at the forefront of enhancing device performance and advancing electronic device capabilities.

Latest Patents

Among Lin Dong's latest patents is a groundbreaking method aimed at improving device performance. This innovation involves a comprehensive approach to forming a semiconductor structure, incorporating several key processes such as annealing a substrate's surface in a hydrogen environment to ensure smoothness, pre-cleaning the surface, and depositing a high-κ dielectric layer. The procedure further includes a re-oxidation process for thermal oxidation, a plasma nitridation process for the insertion of nitrogen atoms, and a post-nitridation annealing process designed to passivate chemical bonds within the dielectric layer.

Another notable patent is focused on the development of a P-type dipole for P-FETs. This patent outlines methods for forming and processing semiconductor devices that integrate a dipole region comprising interlayer dielectric, high-κ dielectric material, and a specific dipole layer. The dipole layer is composed of materials such as titanium aluminum nitride (TiAlN), titanium tantalum nitride (TiTaN), titanium oxide (TiO), tantalum oxide (TaO), and titanium aluminum carbide (TiAlC).

Career Highlights

Lin Dong’s professional journey has seen him work with esteemed organizations such as Applied Materials, Inc. and the University of California. His extensive experience in these institutions has significantly influenced his innovative capacity, allowing him to push the boundaries of technology in the semiconductor space.

Collaborations

Throughout his career, Lin has collaborated with a number of talented individuals, including Naomi Yoshida and Yixiong Yang. These partnerships have contributed to the successful development of his patents and the advancement of ideas within the semiconductor field.

Conclusion

Lin Dong serves as a prominent figure in the invention landscape, with a remarkable record of patents that highlight his innovative prowess. By continuously advancing semiconductor technology, he not only enhances device performance but also shapes the future of electronic devices. His contributions underscore the importance of innovation in driving progress within the industry.

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