The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 08, 2019
Filed:
Aug. 28, 2017
Applied Materials, Inc., Santa Clara, CA (US);
Naomi Yoshida, Sunnyvale, CA (US);
Lin Dong, San Jose, CA (US);
Shiyu Sun, Santa Clara, CA (US);
Myungsun Kim, Pleasanton, CA (US);
Nam Sung Kim, Sunnyvale, CA (US);
Dimitri Kioussis, Santa Clara, CA (US);
Mikhail Korolik, San Jose, CA (US);
Gaetano Santoro, Zaventem, BE;
Vanessa Pena, Flemish Brabant, BE;
Applied Materials, Inc., Santa Clara, CA (US);
Abstract
The present disclosure provides methods for forming horizontal gate-all-around (hGAA) structure devices. In one example, a method includes selectively and laterally etching a first group of sidewalls of a first layer in a multi-material layer, wherein the multi-material layer comprises repeating pairs of the first layer and a second layer, the first and the second layers having the first group and a second group of sidewalls respectively, the first group of sidewalls from the first layer exposed through openings defined in the multi-material layer and a group of inner spacers formed atop of the second group of sidewalls from the second layer, forming a recess from the first group of sidewalls of the first layer and defining a vertical wall inward from an outer vertical surface of the inner spacer formed atop of the second layers, and forming an epi-silicon layer from the recess of the first layer.