Myungsun Kim

Title: Myungsun Kim: Innovator in Semiconductor Technology

Introduction

Myungsun Kim is a prominent inventor based in Pleasanton, CA (US). He has made significant contributions to the field of semiconductor technology, holding a total of 8 patents. His work focuses on advanced device structures that enhance performance and efficiency in electronic applications.

Latest Patents

Among his latest patents is the "Gate all around device with fully-depleted silicon-on-insulator." This patent describes horizontal gate-all-around (hGAA) devices and methods of manufacturing them. The hGAA devices incorporate a fully-depleted silicon-on-insulator (FD-SOI) under the channel layers, maintaining the same footprint as the hGAA. The buried dielectric insulating layer of the FD-SOI includes materials such as silicon oxide (SiOx), silicon nitride (SiN), silicon carbide (SiC), and a high-k material, with a thickness ranging from 0 nm to 10 nm. Another notable patent is the "Formation of gate all around device," which details methods for creating hGAA devices that consist of an oxide layer and a semiconductor material layer situated between source and drain regions. This method involves growing a conformal epitaxial layer on a nanosheet channel layer, followed by radical plasma oxidation (RPO) to oxidize the layer.

Career Highlights

Myungsun Kim is currently employed at Applied Materials, Inc., a leading company in the semiconductor industry. His innovative work has positioned him as a key figure in the development of next-generation semiconductor devices.

Collaborations

He collaborates with talented coworkers, including Benjamin Colombeau and Michael Anthony Stolfi, who contribute to his research and development efforts.

Conclusion

Myungsun Kim's contributions to semiconductor technology through his patents and work at Applied Materials, Inc. highlight his role as an influential inventor in the field. His innovative approaches continue to shape the future of electronic devices.